BaBi_(10)B_6O_(25)掺杂对CaZrO_3陶瓷介电性能的影响  

Effect of BaBi_(10)B_6O_(25) Doping on Dielectric Properties of CaZrO_3 Microwave Dielectric Ceramics

作　　者：孙换 李谦[1] 黄金亮[1] 顾永军[1] 

机构地区：[1]河南科技大学材料科学与工程学院,河南洛阳471003

出　　处：《压电与声光》2015年第2期271-273,276,共4页Piezoelectrics & Acoustooptics

基　　金：河南省国际科技合作计划基金资助项目(0346620012);河南省科技发展计划基金资助项目(092300410135)

摘　　要：研究了BaBi10B6O25掺杂量对CaZrO3陶瓷烧结性能、物相组成、介电性能和微观组织形貌的影响。结果表明,通过掺杂BaBi10B6O25,可使CaZrO3陶瓷的烧结温度由1 500℃降至1 000℃,且无第二相生成,相对密度达98%。当w(BaBi10B6O25)=7.5%时,CaZrO3陶瓷在1 000℃烧结3h获得良好的介电性能:介电常数εr=28,品质因数与频率之积Q·f=8 872GHz,频率温度系数τf=21×10-6/℃。Taking BaBi10B6O25 as the liquid phase sintering assistants,the effects of BaBi10B6O25 doping on the sintering,phase compositions,microstructure morphology and dielectric properties of CaZrO3 ceramics were investigated.The result indicated that BaBi10B6O25 could be used as sintering assistants to reduce the sintering temperature of CaZrO3 ceramics from 1 500 ℃ to 1 000 ℃ without second phase formation.When the mass fraction of BaBi10B6O25 was 7.5%,a high relative density of 98% and good dielectric properties ofεr=28,Q·f=8 872 GHz,τf=21×10-6/℃ were obtained for the CaZrO3 ceramics sintered at 1 000 ℃for 3h.

关 键 词：微波介质陶瓷 CaZrO3陶瓷 介电性能 低温烧结 液相烧结 BaBi10B6O25 

分 类 号：TN304[电子电信—物理电子学] TQ174[化学工程—陶瓷工业]