基于GGNMOS的ESD建模与仿真技术研究  

The ESD Modeling and Simulation Technology Research Based on GGNMOS

作　　者：郭鑫[1] 唐晓莉[1] 张怀武[1] 

机构地区：[1]电子科技大学电子薄膜与集成器件国家重点实验室,四川成都610054

出　　处：《压电与声光》2015年第2期327-329,共3页Piezoelectrics & Acoustooptics

基　　金：自然科学基金资助项目(51171038)

摘　　要：随着微电子加工工艺技术的发展,集成电路对静电越来越敏感。设计合理有效的静电放电(ESD)保护器件显得日趋重要。传统的"手动计算+流片验证"的设计方法费时耗力。该文基于栅极接地的NMOS(GGNMOS)器件,以Sentaurus为仿真平台,建立器件模型,根据ESD防护能力的需求,计算出GGNMOS的设计参数,设计出防护指标达到人体模型(HBM)4.5kV的管子。结果表明,该方法简单有效,能缩短设计周期,是防护器件设计的一种优秀方法。With the development of microelectronics processing technology,integrated circuits are increasingly sensitive to static electricity.A reasonable and effective design of ESD protection devices seems increasingly important.It is time-consuming and labor-intensive for the traditional design method which is＂manual calculation and tapeout verification＂.Based on GGNMOS devices,Sentaurus simulation platform is uesd to establish the device model in this paper.Considered the needs of ESD protection capability,we calculate the design parameters of GGNMOS,design a tube which protect capacity can reach 4.5kV for the HBM.The results show that the method is simple and effective,can greatly shorten the design cycle,which can regarded as an excellent method for protection device.

关 键 词：栅极接地的NMOS(GGNMOS) 人体模型(HBM) 静电放电(ESD) 建模 仿真 

分 类 号：TN406[电子电信—微电子学与固体电子学]