Low-Temperature Deposition of nc-SiO_x:H below 400℃ Using Magnetron Sputtering  

作　　者：李云 尹辰辰 季云 史振亮 靳聪慧 于威 李晓苇 

机构地区：[1]Hebei Key Laboratory of Optic-Electronic Information Materials,College of Physics Science and Technology,Hebei University

出　　处：《Chinese Physics Letters》2015年第4期81-84,共4页中国物理快报（英文版）

基　　金：Supported by the Key Basic Research Project of Hebei Province under Grant No 12963930D;the Natural Science Foundation of Hebei Province under Grant No F2013201250;the Science and Technology Research Projects of the Educational Department of Hebei Province under Grant No ZH2012030

摘　　要：Silicon oxide films containing nanocrystalline silicon （nc-SiOx：H） are deposited by co-sputtering technology at low temperatures （〈400℃） that are much lower than the typical growth temperature of nc-Si in SiO2. The microstructures and bonding properties are characterized by Raman and ETIR. It is proven that an optimum range of su bstrate temperatures for the deposition of nc-SiOx ：H films is 200-400℃, in which the ratio of transition crystalline silicon decreases, the crystalline fraction is higher, and the hydrogen content is lower. The underlying mechanism is explained by a competitive process between nc-Si Wolmer-Weber growth and oxidation reaction, both of which achieve a balance in the range of 200-400℃. We further implement this technique in the fabrication of multilayered nc-SiO=：H/a-SiOx：H films, which exhibit controllable nc-Si sizes with high crystallization quality.Silicon oxide films containing nanocrystalline silicon （nc-SiOx：H） are deposited by co-sputtering technology at low temperatures （〈400℃） that are much lower than the typical growth temperature of nc-Si in SiO2. The microstructures and bonding properties are characterized by Raman and ETIR. It is proven that an optimum range of su bstrate temperatures for the deposition of nc-SiOx ：H films is 200-400℃, in which the ratio of transition crystalline silicon decreases, the crystalline fraction is higher, and the hydrogen content is lower. The underlying mechanism is explained by a competitive process between nc-Si Wolmer-Weber growth and oxidation reaction, both of which achieve a balance in the range of 200-400℃. We further implement this technique in the fabrication of multilayered nc-SiO=：H/a-SiOx：H films, which exhibit controllable nc-Si sizes with high crystallization quality.

关 键 词：SiO Using Magnetron Sputtering Low-Temperature Deposition of nc-SiO_x:H below 400 

分 类 号：O484[理学—固体物理]