Potential Barrier Behavior of BaTiO3-(Bi0.5Na0.5)TiO3 Positive Temperature Coefficient of Resistivity Ceramic  

作　　者：冷森林 石维 李国荣 郑嘹赢 

机构地区：[1]Institute of Physics and Electronics Engineering, Tongren University, Tongren 554300 [2]Key Laboratory of Inorganic Functional Materials and Devices, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050

出　　处：《Chinese Physics Letters》2015年第4期90-93,共4页中国物理快报（英文版）

基　　金：Supported by the Special Foundation for Scientists of Guizhou Province under Grant Nos KY[2012]102 and TZJF-2011-10;the Foundation of Key Laboratory of Inorganic Function Material and Device,the Chinese Academy of Sciences under Grant No KLIFMD2012-02;the National Natural Science Foundation of China under Grant No 51462030

摘　　要：High-Curie-temperature （Tc） lead-free Y-doped 90 mol%BaTiO3-1O mol%（Bi0.5Na0.5 ） TiO3 ceramic with positive temperature coefficient of resistivity （PTCR） is prepared by the conventional solid state reaction in nitrogen atmosphere. The PTCR ceramic exhibits a room-temperature resistivity （p25） of ~500Ω.cm and a high PTCR effect （maximum resistivity （ρmax）/minimum resistivity （ρmin）） of ~4.5 orders of magnitude. A capacitance- voltage approach is first employed to calculate the potential barrier （ Ф ） of the grain boundary of PTCR ceramic above Tc. It is found that the potential barrier changes from 0.17 to 0.77eV as the temperature increases from 180 to 220℃, which is very close to the predictions of the Heywang-Jonker model, suggesting that the capacitance-voltage method is valid to estimate the potential barrier of PTCR thermistor ceramics.High-Curie-temperature （Tc） lead-free Y-doped 90 mol%BaTiO3-1O mol%（Bi0.5Na0.5 ） TiO3 ceramic with positive temperature coefficient of resistivity （PTCR） is prepared by the conventional solid state reaction in nitrogen atmosphere. The PTCR ceramic exhibits a room-temperature resistivity （p25） of ~500Ω.cm and a high PTCR effect （maximum resistivity （ρmax）/minimum resistivity （ρmin）） of ~4.5 orders of magnitude. A capacitance- voltage approach is first employed to calculate the potential barrier （ Ф ） of the grain boundary of PTCR ceramic above Tc. It is found that the potential barrier changes from 0.17 to 0.77eV as the temperature increases from 180 to 220℃, which is very close to the predictions of the Heywang-Jonker model, suggesting that the capacitance-voltage method is valid to estimate the potential barrier of PTCR thermistor ceramics.

关 键 词：Potential Barrier Behavior of BaTiO3 NA Bi 

分 类 号：O469[理学—凝聚态物理]