基于Ⅲ-Ⅴ族材料制备的高效多结太阳电池最新技术进展  

Latest Technological Development of Highly Efficient Ⅲ-Ⅴ Multi-junction Solar Cells

作　　者：付蕊[1] 陈诺夫[1] 涂洁磊[2] 化麒麟[3] 白一鸣[1] 弭辙[1] 刘虎[4] 陈吉堃[1] 

机构地区：[1]华北电力大学可再生能源学院新能源电力国家重点实验室,北京102206 [2]云南师范大学太阳能研究所,昆明650092 [3]中国科学院北京纳米能源与系统研究所,北京100083 [4]石家庄铁道大学数理系,石家庄050041

出　　处：《材料导报》2015年第7期124-128,149,共6页Materials Reports

基　　金：国家高新技术研究计划863项目(2011AA050507;2011AA050512);国家自然科学基金(61006050;61076051);北京市自然科学基金(2151004);中央高校基本科研业务费专项基金(13ZD05)

摘　　要：基于Ⅲ-Ⅴ族材料制备的多结太阳电池由于优越的性能,在空间电源领域和地面聚光方面的应用越来越受到重视。介绍了多结太阳电池的高光电转换效率机理,并从材料选择、结构设计、优化生长工艺等方面讨论了研发Ⅲ-Ⅴ族高效多结太阳电池的实现方案和最新技术进展。重点探讨了采用GaInNAs(Sb)新材料、倒置生长、半导体键合等技术方法。其中,采用半导体键合技术制备的GaInP/GaAs//GaInAsP/GaInAs四结太阳电池光电转换效率为46%,也是目前实验室最高效率。此外,分析了Ⅲ-Ⅴ族高效多结太阳电池的发展方向,并对其前景进行了展望。Due to the superior performance, more and more attention has been paid to multi-junction solar cells made from Ⅲ-Ⅴ compound semiconductors both for space and terrestrial application. The latest technological development of highly efficient Ⅲ-Ⅴ multi-junction solar cells is briefly illustrated from three aspects： material selection, device structure design and growth process optimization. Some technical approaches are highlighted such as using in GaAsN material, adopting inverted growth and bonding techniques. A record efficiency of 46 % at 508 suns with 4 junction concentrator solar cell has been achieved by using semiconductor bonded technology. The future development of Ⅲ-Ⅴ multi-junction solar cells is discussed as well.

关 键 词：Ⅲ-Ⅴ族化合物 高效多结太阳电池 半导体键合晶格失配 

分 类 号：TM914.4[电气工程—电力电子与电力传动]