一种低功耗高精度带隙基准的设计  

Design of a bandgap reference voltage with low power consumption and high- accuracy

作　　者：李睿[1] 冯全源[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都611756

出　　处：《电子技术应用》2015年第3期51-54,共4页Application of Electronic Technique

基　　金：国家自然科学基金重大项目(60990323);国家自然科学基金面上项目(61271090)

摘　　要：基于U MC 0.25μm BCD工艺,在传统带隙基准结构的基础上,设计了一种具有低功耗、高精度的基准,同时利用N MOS管工作在亚阈值区域时漏电流和栅极电压的指数特性,对基准温度特性曲线进行二阶补偿。仿真结果表明,电源电压5V时,静态电流功耗为3.16μA;电源电压2.5 V^5.5 V,基准电压变化53μV;温度在-40℃~130℃内,电路的温度系数为0.86×10-6/℃;三种工艺角下,低频时电路电源抑制比都小于-95 d B。A new bandgap reference voltage with low consumption and high-accuracy performance, which is based on UMC 0.25 μm BCD process and the traditional bandgap reference construct. It uses the exponential response curve between leakage current and grid voltage when the N type MOS-FET is working in the sub-threshold region to compensate the temperature characteristic curve. The simulation shows that quiescent current is 3.16 μA when power supply is 5 V. The change amplitude of reference voltage is 53 μV when the power supply is from 2.5 V to 5.5 V. The temperature coefficient is 0.86×10-6-/℃ from -40 % to 130 ℃. The PSRR is lower than-60 dB at the three process corner.

关 键 词：带隙基准 功耗 曲率补偿 低温漂 

分 类 号：TN433[电子电信—微电子学与固体电子学]