含各向异性左手材料的一维Thue-Mores准周期结构的反射带隙  

Reflection Band Gap in Thue-Morse Quasicrystal Containing Anisotropic Left Handed Material

作　　者：康永强[1,2] 高鹏[3] 刘红梅[1] 张淳民[2] 

机构地区：[1]山西大同大学物理电子科学学院固体物理研究所,山西大同037009 [2]西安交通大学理学院空间光学研究所,西安710049 [3]青岛科技大学数理学院,山东青岛266061

出　　处：《光子学报》2015年第3期36-41,共6页Acta Photonica Sinica

基　　金：国家自然科学基金(Nos.61307121;60278019;11274207)资助

摘　　要：采用传输矩阵法,研究了由各向同性右手材料和各向异性左手材料组成的Thue-Morse准周期结构的反射带隙,分析了入射角、偏振和晶格比例缩放因子对反射带隙的影响.结果表明该结构存在一个全方向反射带隙,该带隙的宽度由TE模的低频带边缘和TM模的高频带边缘决定.当在该结构中插入一层缺陷时,在全方向带隙中出现一条缺陷模.对TE模,缺陷模的位置受入射角的影响很弱,而对TM模,缺陷模的位置随入射角的增大,向高频方向移动.By means of transfer matrix method, the reflection band gap of Thue-Morse（T-M） structure containing anisotropic left handed material was studied. The influence of incident angle, polarization and lattice scaling factor on reflection band gap was theoretically investigated. It is shown that there is an Omnidirectional Reflection Band （ORB） in the structure. The width of the ORB is determined by the higher frequency band edge for TE polarization and the lower frequency band edge for TM polarization. When an impurity is introduced, a defect mode appears in the reflection band gap. The position of the defect modes is weakly dependent on incident angle for TE polarization,but affected by incident angle for TM polarization.

关 键 词：各向异性 左手材料 反射带 传输矩阵 Thue-Morse准晶 

分 类 号：O469[理学—凝聚态物理]