大功率IGBT驱动电路设计与应用  

Design and Application of High Power IGBT Drive Circuit

作　　者：凤良燕 郑崇伟[1] 

机构地区：[1]温州大学物理与电子信息工程学院,浙江温州325035 [2]浙江埃菲生能源科技有限公司,浙江温州325035

出　　处：《电子器件》2015年第2期343-347,共5页Chinese Journal of Electron Devices

基　　金：国家自然科学基金项目(51207112)

摘　　要：绝缘栅型双极性晶体管Insulated Gate Bipolar Transistor(IGBT)作为电力变换装置的核心器件,它的可靠稳定工作直接影响着系统的性能,这对IGBT的驱动电路提出了很高的要求。针对500kW光伏逆变器,基于该逆变器的结构拓扑和IGBT型号,给出了一种IGBT驱动电路的设计方案,研究了驱动电路和保护电路的主要设计原理和注意问题。最后,结合实际应用,给出了该驱动电路的驱动波形和逆变交流侧电流波形,分析和讨论了该驱动电路设计的可靠性与合理性。As the basic component of power conversion device,IGBT（ Insulated Gate Bipolar Transistor） stability and reliability affect the inverter＇s performance directly,so a high requirement for drive circuit should be considered. A design proposal of drive circuit for 500kW photovoltaic inverter was introduced on the base of topological graph and device type,especially studied design principles and some key issues how to drive and protect IG-BT. Lastly,combined with application,the reliability and rationality of drive circuit were analyzed and discussed through the given driving waveforms and inverter current waveforms.

关 键 词：光伏逆变器 IGBT 驱动电路 IGBT保护 

分 类 号：TM464[电气工程—电器]