电热化学发射中硅堆故障试验分析  

Test and Analysis of Silicon Stack Failure in Electrothermal-chemical Launch

作　　者：李贞晓[1] 张亚舟[1] 高梁[1] 金涌[1] 栗保明[1] 

机构地区：[1]南京理工大学瞬态物理国家重点实验室,江苏南京210094

出　　处：《兵工学报》2015年第4期577-581,共5页Acta Armamentarii

基　　金：国家自然科学基金项目(11272158)

摘　　要：针对电热化学发射试验中脉冲电源发生的高压硅堆损坏,分析可能导致器件损坏的原因,通过机械振动冲击试验、脉冲放电仿真与试验、硅堆反向恢复特性测量等确定故障原因。研究结果表明:电热化学发射过程中的机械振动冲击不会造成硅堆损伤,故障由电感性质负载特性、串联元件的反向恢复特性不一致和脉冲电源非同步放电等因素共同造成,传输线电感分量偏大是故障发生的直接原因。研究结论对于高压硅堆在电热化学发射中的应用具有指导作用。The silicon stack damage is observed in electrothermal-chemical launch experiment. The details of the possible reasons are analyzed. And the reasons are determined through mechanical vibration impact test, simulation and tests of pulse power supply discharge, and reverse recovery characteristics measurements of silicon stack. Results show that the mechanical vibration shock cannot lead to the silicon stack damage in electrothermal-chemical launch. The silicon stack damage is mainly caused by the cooperation of the reverse recovery characteristics of series components, the inductance characteristic of load and the asynchronous discharge of pulse power supply. The large inductance of the transmission lines is the direct cause for the damage of the silicon stacks in the system.

关 键 词：兵器科学与技术 脉冲电源 高压硅堆 电热化学发射 过电压 

分 类 号：TJ303.9[兵器科学与技术—火炮、自动武器与弹药工程]