Physically-based modeling for hole scattering rate in strained Si_(1-x) Ge_x/(100)Si  

作　　者：王斌 胡辉勇 张鹤鸣 宋建军 张玉明 

机构地区：[1]School of Advanced Materials and Nanotechnology, Xidian University [2]Key Lab of Wide Band-Gap Semiconductor Materials and Devices(School of Microelectronics, Xidian University)

出　　处：《Journal of Central South University》2015年第2期430-436,共7页中南大学学报（英文版）

基　　金：Project(JY0300122503)supported by the Research Fund for the Doctoral Program of Higher Education of China;Project(P140c090303110c0904)supported by NLAIC Research Fund,China;Projects(K5051225014,7214608503)supported by the Fundamental Research Funds for the Central Universities,China

摘　　要：Based on the Fermi's golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate(SR) in strained Si1-x Gex/(100)Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/(100)Si also decreases obviously with increasing Ge fraction(x). Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/(100) Si decreases by about 58%.Based on the Fermi＇s golden rule and the theory of Boltzmann collision term approximation, a physically-based model for hole scattering rate（SR） in strained Si1-x Gex/（100）Si was presented, which takes into account a variety of scattering mechanisms,including ionized impurity, acoustic phonon, non-polar optical phonon and alloy disorder scattering. It is indicated that the SRs of acoustic phonon and non-polar optical phonon decrease under the strain, and the total SR in strained Si1-x Gex/（100）Si also decreases obviously with increasing Ge fraction（x）. Moreover, the total SR continues to show a constant tendency when x is less than 0.3. In comparison with bulk Si, the total SR of strained Si1-x Gex/（100） Si decreases by about 58%.

关 键 词：strained Si1-x Gex biaxial stress hole scattering rate effective mass 

分 类 号：O422.5[理学—声学]