应用于硅基等离子天线的横向PIN二极管的研究  

Research on Lateral PIN Diodes for Silicon-based Plasma Antenna

作　　者：刘会刚[1] 梁达[1] 廖沁悦 张时雨 陈晨[1] 孙菁[1] 任立儒[1] 耿卫东[1] 张德贤[1] 

机构地区：[1]南开大学电子信息与光学工程学院天津市光电子薄膜器件与技术重点实验室,天津300071

出　　处：《半导体光电》2015年第1期7-11,51,共6页Semiconductor Optoelectronics

基　　金：国家自然科学基金青年科学基金项目(61401237);天津市自然科学基金青年项目(13JCQNJC01200);高等学校博士学科点专项科研基金资助课题(20130031120034);国家级大学生创新创业训练计划项目(201410055056)

摘　　要：介绍了横向PIN二极管及其在硅基等离子天线方面的应用,用一维理论分析了载流子大注入情况下横向PIN二极管本征区载流子浓度分布。对横向PIN二极管进行了物理建模,仿真分析了本征区长度、二氧化硅埋层、电极长度、结区掺杂浓度及表面电荷对横向PIN二极管本征区载流子浓度的影响,总结了横向PIN二极管的一般设计规则。In this paper, the lateral pin diode and its applications in the silicon-based plasma antenna were introduced. By using one-dimensional theoretical analysis, the intrinsic carrier concentration was discussed under high injection of carrier. By setting up the lateral PIN diode physics model, the influences of the length of intrinsic, silica buried layer, the length of electrode, doping concentration and surface charges on the intrinsic carrier concentration were simulated and analyzed. The general design rules of the lateral PIN diode were summarized.

关 键 词：硅基等离子 天线 横向PIN二极管 载流子浓度 

分 类 号：TN312.4[电子电信—物理电子学]