纳米二氧化钒薄膜的制备及其特性研究  

Study on Preparation and Characteristics of Nano-VO_2 Films

作　　者：李建国[1] 惠龙飞[1] 冯昊[1] 秦利军[1] 龚婷[1] 安忠维[1] 

机构地区：[1]西安近代化学研究所,西安710065

出　　处：《半导体光电》2015年第1期75-80,共6页Semiconductor Optoelectronics

基　　金：国防基础科研基金项目

摘　　要：采用原子层沉积(ALD)方法,分别以VO(OC3H7)3和H2O2为钒源和氧源,在载玻片基底上沉积钒氧化物薄膜;在还原气氛的管式炉中,对钒氧化物薄膜进行还原退火结晶,进而得到VO2薄膜晶体。通过扫描电镜(SEM)、X-射线衍射(XRD)及X-射线光电子能谱(XPS)研究所制备的钒氧化物薄膜表面形貌、晶体结构以及组分的变化;利用傅里叶红外光谱(FT-IR)对VO2薄膜的红外透射性进行测试分析。结果表明:ALD所制备的薄膜以非晶态V2O5、VO2和V2O3为主;在通以还原气氛(95%Ar,5%H2)并500℃热处理2h后得到以(011)择优取向的单斜金红石纳米VO2薄膜,VO2晶体薄膜相变前后红外透过率突变量较大。Using vanadyl isopropylate （VO（C3 H70）3） and oxydol（H202） as the vanadium and oxygen sources precursors, respectively, VO2 films were prepared on glass substrates based on ALD technology. In a reducing atmosphere of a tube furnace, vanadium oxide films were restored by annealing crystallization and then VO2 films were obtained. The crystal structure, surface morphology and constituent changes of the film surface of vanadium oxides were characterized by X-ray diffraction （XRD）, Scanning Electron Microscope （SEM） and X-ray spectroscopy （XPS）. Infrared transmission of VOz films was analyzed by Fourier Transform Infrared spectroscopy（FT-IR）. The results show that, the vanadium oxide films prepared by ALD consist with amorphous V2O5, VO2 and V2O3. In the heat treatment at 500 ℃ under reducing atmosphere（95%Ar, 5% He） for 2 h, monoclinic futile VO2 films are obtained with preferred （011） orientation. And VO2 film crystal has a greater mutation of infrared transmittance before and after phase transition.

关 键 词：原子层沉积(ALD) 纳米二氧化钒薄膜 半导体-金属相变 红外透过率 

分 类 号：TB34[一般工业技术—材料科学与工程]