The enhancement of 21.2%-power conversion efficiency in polymer photovoltaic cells by using mixed Au nanoparticles with a wide absorption spectrum of 400 nm–1000 nm  

作　　者：郝敬昱 徐颖 张玉佩 陈淑芬 李兴鳌 汪联辉 黄维 

机构地区：[1]Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications [2]Key Laboratory of Flexible Electronics (KLOFE) and Institute of Advanced Materials (IAM), Jiangsu National Synergistic Innovation Center for Advanced Materials (SICAM), Nanjing Tech University

出　　处：《Chinese Physics B》2015年第4期283-289,共7页中国物理B（英文版）

基　　金：Project supported by the National Basic Research Program of China(Grant Nos.2015CB932202 and 2012CB933301);the National Natural Science Foundation of China(Grant Nos.61274065,51173081,61136003,BZ2010043,51372119,and 51172110);the Science Fund from the Ministry of Education of China(Grant No.IRT1148);the Specialized Research Fund for the Doctoral Program of Higher Education of China(Grant No.20113223110005);the Priority Academic Program Development of Jiangsu Provincial Higher Education Institutions(Grant No.YX03001);the National Synergistic Innovation Center for Advanced Materials and the Synergetic Innovation Center for Organic Electronics and Information Displays,China

摘　　要：Au nanoparticles （NPs） mixed with a majority of bone-like, rod, and cube shapes and a minority of irregu- lar spheres, which can generate a wide absorption spectrum of 400 nm-1000 nm and three localized surface plas- mon resonance peaks, respectively, at 525, 575, and 775 nrn, are introduced into the hole extraction layer poly（3,4- ethylenedioxythiophene）：poly（4-styrenesulfonate） （PEDOT：PSS） to improve optical-to-electrical conversion performances in polymer photovoltaic ceils. With the doping concentration of Au NPs optimized, the cell performance is significantly improved： the short-circuit current density and power conversion efficiency of the poly（3-hexylthiophene）： [6,6]-phenyl- C60-butyric acid methyl ester cell are increased by 20.54% and 21.2%, reaching 11.15 mA.cm-2 and 4.23%. The variations of optical, electrical, and morphology with the incorporation of Au NPs in the cells are analyzed in detail, and our results demonstrate that the cell performance improvement can be attributed to a synergistic reaction, including： 1） both the local- ized surface plasmon resonanceand scattering-induced absorption enhancement of the active layer, 2） Au doping-induced hole transport/extraction ability enhancement, and 3） large interface roughness-induced efficient exciton dissociation and hole collection.Au nanoparticles （NPs） mixed with a majority of bone-like, rod, and cube shapes and a minority of irregu- lar spheres, which can generate a wide absorption spectrum of 400 nm-1000 nm and three localized surface plas- mon resonance peaks, respectively, at 525, 575, and 775 nrn, are introduced into the hole extraction layer poly（3,4- ethylenedioxythiophene）：poly（4-styrenesulfonate） （PEDOT：PSS） to improve optical-to-electrical conversion performances in polymer photovoltaic ceils. With the doping concentration of Au NPs optimized, the cell performance is significantly improved： the short-circuit current density and power conversion efficiency of the poly（3-hexylthiophene）： [6,6]-phenyl- C60-butyric acid methyl ester cell are increased by 20.54% and 21.2%, reaching 11.15 mA.cm-2 and 4.23%. The variations of optical, electrical, and morphology with the incorporation of Au NPs in the cells are analyzed in detail, and our results demonstrate that the cell performance improvement can be attributed to a synergistic reaction, including： 1） both the local- ized surface plasmon resonanceand scattering-induced absorption enhancement of the active layer, 2） Au doping-induced hole transport/extraction ability enhancement, and 3） large interface roughness-induced efficient exciton dissociation and hole collection.

关 键 词：Au nanoparticle polymer solar cells localized surface plasmon resonance SCATTERING hole transport 

分 类 号：TM914.4[电气工程—电力电子与电力传动]