Improvement of mobility edge model by using new density of states with exponential tail for organic diode  

作　　者：Muhammad Ammar Khan 孙久勋 

机构地区：[1]School of Physical Electronics, University of Electronic Science and Technology

出　　处：《Chinese Physics B》2015年第4期360-365,共6页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant No.31470822)

摘　　要：The mobility edge （ME） model with single Gaussian density of states （DOS） is simplified based on the recent exper- imental results about the Einstein relationship. The free holes are treated as being non-degenerate, and the trapped holes are dealt with as being degenerate. This enables the integral for the trapped holes to be easily realized in a program. The J-V curves are obtained through solving drift-diffusion equations. When this model is applied to four organic diodes, an obvious deviation between theoretical curves and experimental data is observed. In order to solve this problem, a new DOS with exponential tall is proposed. The results show that the consistence between J-V curves and experimental data based on a new DOS is far better than that based on the Gaussian DOS. The variation of extracted mobility with temperature can be well described by the Arrhenius relationship.The mobility edge （ME） model with single Gaussian density of states （DOS） is simplified based on the recent exper- imental results about the Einstein relationship. The free holes are treated as being non-degenerate, and the trapped holes are dealt with as being degenerate. This enables the integral for the trapped holes to be easily realized in a program. The J-V curves are obtained through solving drift-diffusion equations. When this model is applied to four organic diodes, an obvious deviation between theoretical curves and experimental data is observed. In order to solve this problem, a new DOS with exponential tall is proposed. The results show that the consistence between J-V curves and experimental data based on a new DOS is far better than that based on the Gaussian DOS. The variation of extracted mobility with temperature can be well described by the Arrhenius relationship.

关 键 词：organic diode potential barriers Einstein relationship 

分 类 号：TN31[电子电信—物理电子学]