Enhanced near-infrared responsivity of silicon photodetector by the impurity photovoltaic effect  

作　　者：袁吉仁 黄海宾 邓新华 梁晓军 周耐根 周浪 

机构地区：[1]Institute of Photovoltaics, Nanchang University [2]School of Science, Nanchang University

出　　处：《Chinese Physics B》2015年第4期521-524,共4页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Grant Nos.61464007,61306084,and 51361022);the Postdoctoral Science Foundation of Jiangxi Province,China(Grant No.2014KY32);the Natural Science Foundation of Jiangxi Province,China(Grant No.20122BAB202002)

摘　　要：The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic （IPV） effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.The near-infrared responsivity of a silicon photodetector employing the impurity photovoltaic （IPV） effect is investigated with a numerical method. The improvement of the responsivity can reach 0.358 A/W at a wavelength of about 1200 nm, and its corresponding quantum efficiency is 41.1%. The origin of the enhanced responsivity is attributed to the absorption of sub-bandgap photons, which results in the carrier transition from the impurity energy level to the conduction band. The results indicate that the IPV effect may provide a general approach to enhancing the responsivity of photodetectors.

关 键 词：impurity photovoltaic effect RESPONSIVITY PHOTODETECTOR 

分 类 号：TN215[电子电信—物理电子学] TN304.22