Molecular dynamic simulations of surface morphology and pulsed laser deposition growth of lithium niobate thin films on silicon substrate  

作　　者：刘悦 朱浩楠 裴子栋 孔勇发 许京军 

机构地区：[1]The MOE Key Laboratory of Weak-Light Nonlinear Photonics and TEDA Applied Physics School, Nankai University [2]School of Mathematical Science, Peking University [3]R & D Center, Taishan Sports Industry Group

出　　处：《Chinese Physics B》2015年第5期464-467,共4页中国物理B（英文版）

基　　金：supported by the National Basic Research Program of China(Grant No.2011CB922003);the International S&T Cooperation Program of China(Grant No.2013DFG52660);the Taishan Scholar Construction Project Special Fund,China;the Fundamental Research Funds for the Central Universities,China(Grant Nos.65030091 and 65010961)

摘　　要：The molecular dynamic simulation of lithium niobate thin films deposited on silicon substrate is carried out by using the dissipative particle dynamics method. The simulation results show that the Si （111） surface is more suitable for the growth of smooth LiNbO3 thin films compared to the Si（100） surface, and the optimal deposition temperature is around 873 K, which is consistent with the atomic force microscope results. In addition, the calculation molecular number is increased to take the electron spins and other molecular details into account.The molecular dynamic simulation of lithium niobate thin films deposited on silicon substrate is carried out by using the dissipative particle dynamics method. The simulation results show that the Si （111） surface is more suitable for the growth of smooth LiNbO3 thin films compared to the Si（100） surface, and the optimal deposition temperature is around 873 K, which is consistent with the atomic force microscope results. In addition, the calculation molecular number is increased to take the electron spins and other molecular details into account.

关 键 词：lithium niobate SILICON dissipative particle dynamics 

分 类 号：O484.1[理学—固体物理] TQ320.1[理学—物理]