Si and Mg pair-doped interlayers for improving performance of AlGaN/GaN heterostructure field effect transistors grown on Si substrate  

作　　者：倪毅强 贺致远 姚尧 杨帆 周德秋 周桂林 沈震 钟健 郑越 张佰君 刘扬 

机构地区：[1]School of Physics and Engineering, State Key Laboratory of Optoelectronic Materials and Technologies,Sun Yat-Sen University

出　　处：《Chinese Physics B》2015年第5期529-534,共6页中国物理B（英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.51177175 and 61274039);the National Basic Research Project of China(Grant Nos.2010CB923200 and 2011CB301903);the Ph.D.Program Foundation of Ministry of Education of China(Grant No.20110171110021);the International Sci.&Tech.Collaboration Program of China(Grant No.2012DFG52260);the National High-tech R&D Program of China(Grant No.2014AA032606);the Science and Technology Plan of Guangdong Province,China(Grant No.2013B010401013);the Opened Fund of the State Key Laboratory on Integrated Optoelectronics(Grant No.IOSKL2014KF17)

摘　　要：We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio （ - 10^9）. Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.We report a novel structure of A1GaN/GaN heterostructure field effect transistors （HFETs） with a Si and Mg pair- doped interlayer grown on Si substrate. By optimizing the doping concentrations of the pair-doped interlayers, the mobility of 2DEG increases by twice for the conventional structure under 5 K due to the improved crystalline quality of the conduction channel. The proposed HFET shows a four orders lower off-state leakage current, resulting in a much higher on/off ratio （ - 10^9）. Further temperature-dependent performance of Schottky diodes revealed that the inhibition of shallow surface traps in proposed HFETs should be the main reason for the suppression of leakage current.

关 键 词：heterostructure field effect transistor （HFET） GaN on Si INTERLAYERS high on/off ratio 

分 类 号：TN386[电子电信—物理电子学] TN304.23