侧壁粗糙度与几何结构对SOI脊形波导损耗的影响  

Effects of Sidewall-Roughness and Geometry on Scattering Loss of SOI Rib Waveguide

作　　者：刘军[1,2] 刘金良[1] 陈亮[1] 张忠兵[1] 刘林月[1] 

机构地区：[1]西北核技术研究所,西安710024 [2]国防科技大学机电工程与自动化学院,长沙410073

出　　处：《现代应用物理》2015年第1期37-41,共5页Modern Applied Physics

摘　　要：基于条形波导传统数学模型和等效折射率方法,建立了SOI(silicon-on-insulator)脊形波导散射损耗的数学模型,重点讨论了侧壁粗糙度与几何结构对波导散射损耗系数的影响。研究表明:侧壁粗糙度是引起散射损耗的主要因素;波导几何结构对散射损耗的影响主要由波导宽度决定;对于给定刻蚀深度,损耗随波导宽度增大而减小;对于给定波导宽度,损耗随刻蚀深度增大而增大。A numerical model was developed based on conventional expressions of strip waveguide and the equivalent index method to investigate the effects of sidewall roughness and geometry of SOI rib waveguides on the scattering loss.The calculation result shows the sidewall roughness is the chief factor for causing scattering loss,and the loss caused by geometry is determined by the width of the waveguide.For a given etching depth,the loss would decrease with the increase of width,and for a given width of waveguide,it would rise with the increase of etching depth.

关 键 词：集成光学 脊形波导 散射损耗 粗糙度 

分 类 号：TN252[电子电信—物理电子学]