基于改进TRL校准算法的二极管参数测量  

Measurement of PIN diode parameters based on TRL calibration algorithm

作　　者：易波[1] 王为[1,2] 刘培国[1] 杨成[1] 董雁飞[1] 刘晨曦[1] 李岩[1] 

机构地区：[1]国防科学技术大学电子科学与工程学院 [2]中国人民解放军61123部队

出　　处：《中国舰船研究》2015年第2期121-124,共4页Chinese Journal of Ship Research

基　　金：国家级重大基础研究项目

摘　　要：加载二极管的频率选择表面和能量选择表面(以下统称"自激励表面")具有自适应的防护特征,能够防护强电磁攻击。二极管本身参数的测量是自激励表面设计中重要的环节,准确测得二极管特征参数对于设计出满足需求的防护表面至关重要。介绍传统去嵌入法,针对传统去嵌入法存在校准件制作精度要求高、相位延时有范围的缺点,改进了用于二极管参数测量的去嵌入算法;测量几种不同PIN型号的二极管,通过对比PIN参数手册与测试结果,验证了测试方法的有效性。The frequency selective surface and the energy selective surface （both are referred to as the self-actuated surface hereafter） of the loaded diode have the ability of changing transmission characteris- tics according to the incident wave energy and, therefore, could be applied to the defense of strong electro- magnetic attack. Particularly, the measurement of the diode parameter is a key process in the design of a self-actuated surface, suggesting that the accuracy of the measurement is crucial to the surface quahty. 1o do so, a traditional de-embed method is studied in the paper firstly. Aiming at its defects （such as the strictness in the requirement of calibration pieces and phase delay） , this paper presents an improved de-embed calibration algorithm. Validation results reveal great consistency with the data sheet given by di- ode manuals.

关 键 词：去嵌入法 PIN二极管测量 TRL校准算法 

分 类 号：U665.2[交通运输工程—船舶及航道工程]