225 GHz三倍频器实用设计方法  

Research on the practical design method of 225 GHz tripler

作　　者：孟进[1,2] 张德海[1] 蒋长宏[1] 赵鑫[1] 姚常飞[3] 

机构地区：[1]中国科学院空间科学与应用研究中心微波遥感重点实验室,北京100190 [2]中国科学院大学,北京100190 [3]南京电子器件研究所微波毫米波模块电路事业部,江苏南京210016

出　　处：《红外与毫米波学报》2015年第2期190-195,共6页Journal of Infrared and Millimeter Waves

摘　　要：结合国内现有的加工工艺水平,提出自偏置条件下的反向并联二极管对电路结构.不但解决了三倍频器偏置电路加工的难题,而且可以有效实现奇次倍频.同时,利用HFSS和ADS软件,以场路结合的方式准确模拟三倍频器的电特性,考虑到寄生参数引入的影响.设计完成以后,器件加工以及电装过程均在国内完成.测试结果表明在221 GHz处,有最大输出功率3.1 m W,在219~227 GHz频率范围内输出功率均大于2 m W.以上研究为今后设计高效率亚毫米波倍频器提供重要的参考价值.According to the level of domestic processing technology at present, the circuit structure of anti-parallel diodes with self-bias was proposed. With this structure, not only the difficult problem of processing bias circuit can be solved, but also the odd-order frequency multiplication can be realized efficiently. At the meantime, co-simulation approach was used to simulate the electrical characteristic of the tripler by software HFSS and ADS, including the impact of the paras- tics. After designing, both the machining and electrical installation are accomplished. The highest measured output pow- er is 3.1 mW at 221 GHz and the output power is more than 2 mW at frequencies of the range 219 ~227 GHz. These re- suits can provide important reference for future design of high efficiency submillimeter frequency multiplier.

关 键 词：三倍频器 变容二极管 自偏置 阻抗匹配 

分 类 号：TN771[电子电信—电路与系统]