一种带曲率补偿的CMOS带隙基准源  

CMOS bandgap reference with curvature compensation

作　　者：贾孜涵 冯全源[1] 庄圣贤[1] 

机构地区：[1]西南交通大学微电子研究所,四川成都610031

出　　处：《电子元件与材料》2015年第5期50-53,共4页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(N0.61271090);四川科技支撑计划项目资助(No.2015GZ0103)

摘　　要：设计了一种基于UMC 0.25μm BCD工艺的带隙基准电路。采用放大器钳位的传统实现方式,运用自偏置启动电路,鉴于对温漂的要求选用了二阶补偿电路。HSPICE仿真结果显示:在5.0 V供电电压下,温度在–40^+125℃变化时,基准输出1.196 2 V,波动范围为1.195 9~1.196 3 V,温度系数为3.76×10–6/℃;电源电压从2.5 V到5.0 V变化时,基准输出电压VREF的线性调整率为0.38%,低频时电路的电源抑制比(PSRR)为–83 d B。Based on UMC 0.25 μm BCD process, a low temperature drift bandgap reference with second order curvature compensation was designed. The prototype was implemented with traditional amplifier clamping, using self-up bias circuit. The second order temperature compensation was designed for the high demand for temperature drift. HSPICE simulation results show that under the power supply voltage of 5.0 V with the temperature range from -40-±125 ℃, the bandgap has an output reference voltage of 1.196 2 V, fluctuation of 1.195 9-1.196 3 V, a temperature coefficient about 3.76× 10-6/℃. When the voltage changes from 2.5 V to 5.0 V, linear regulation of Vref is 0.38% with a low frequency power supply rejection ratio （PSRR） of-83 dB.

关 键 词：带隙基准源 曲率补偿 温度系数 电源抑制比 线性调整率 低温漂 

分 类 号：TN432[电子电信—微电子学与固体电子学]