基于正交设计的硅通孔信号完整性分析  

Signal integrity analysis of TSV based on orthogonal design

作　　者：梁颖[1] 林训超[2] 黄春跃[3] 邵良滨 张欣[1] 

机构地区：[1]成都航空职业技术学院电子工程系,四川成都610100 [2]成都航空职业技术学院科技处,四川成都610100 [3]桂林电子科技大学机电工程学院,广西桂林541004

出　　处：《电子元件与材料》2015年第5期66-70,共5页Electronic Components And Materials

基　　金：国家自然科学基金资助项目(No.51465012);广西壮族自治区自然科学基金资助项目(No.2012GXNSFAA053234;No.2013GXNSFAA019322);四川省教育厅科研资助项目(No.13ZB0052)

摘　　要：针对硅通孔(Through Silicon Via;TSV)高度、直径和绝缘层厚度三个结构参数建立了25种不同水平组合的HFSS仿真模型,获取了这25种TSV的回波损耗和插入损耗并进行了方差分析。结果表明:随信号频率升高,TSV最大表面电场强度和插入损耗减小而回波损耗增大;在置信度为99%时,TSV高度是影响回波损耗和插入损耗的显著性因素;TSV直径和绝缘层厚度对回波损耗和插入损耗影响均不显著;TSV高度对回波损耗和插入损耗影响最大,其次是TSV直径,最后是绝缘层厚度。The TSV （through silicon via） height, TSV diameter and thickness of SiO2 insulating layer were selected as three key parameters. By using HFSS software the TSV models which had 25 different configuration parameters＇ levels combinations were set up. Return loss data and insertion loss data of the 25 TSV models were obtained, and the data were analyzed by variance analysis. The results show that when the signal frequency increases, both the maximum surface electric field strength and the insertion loss of TSV decrease, while the return loss increases. With 99% confidence, the TSV height has significant effect on the return .loss and the insertion loss of TSV; the TSV diameter and the thickness of insulating layer have no significant effect on the retttrn loss and the insertion loss. The TSV height, the TSV diameter and the thickness of insulating layer affect the return loss and the insertion loss of TSV in a descending order.

关 键 词：硅通孔 电场强度 回波损耗 插入损耗 正交设计 方差分析 

分 类 号：TP391.9[自动化与计算机技术—计算机应用技术]