Simulation of a high-efficiency silicon-based heterojunction solar cell  

作　　者：刘剑 黄仕华 何绿 

机构地区：[1]Physics Department,Zhejiang Normal University

出　　处：《Journal of Semiconductors》2015年第4期78-85,共8页半导体学报（英文版）

基　　金：supported by the National Natural Science Foundation of China(No.61076055);the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University(No.FDS-KL2011-04);the Zhejiang Provincial Science and Technology Key Innovation Team(No.2011R50012);the Zhejiang Provincial Key Laboratory(No.2013E10022)

摘　　要：The basic parameters of a-Si：H/c-Si heterojunction solar cells, such as layer thickness, doping concen- tration, a-Si：H/c-Si interface defect density, and the work functions of the transparent conducting oxide （TCO） and back surface field （BSF） layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si：H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si：H/i-a-Si：H/p-c-Si/p＋-a-Si：H/Ag solar cell, a photoelectric conversion efficiency of 27.07% （Voc： 749 mV, Jsc： 42.86 mA/cm2, FF： 84.33%） was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si：H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer （HIT） solar cell manufacturing.The basic parameters of a-Si：H/c-Si heterojunction solar cells, such as layer thickness, doping concen- tration, a-Si：H/c-Si interface defect density, and the work functions of the transparent conducting oxide （TCO） and back surface field （BSF） layer, are crucial factors that influence the carrier transport properties and the efficiency of the solar cells. The correlations between the carrier transport properties and these parameters and the performance of a-Si：H/c-Si heterojunction solar cells were investigated using the AFORS-HET program. Through the analysis and optimization of a TCO/n-a-Si：H/i-a-Si：H/p-c-Si/p＋-a-Si：H/Ag solar cell, a photoelectric conversion efficiency of 27.07% （Voc： 749 mV, Jsc： 42.86 mA/cm2, FF： 84.33%） was obtained through simulation. An in-depth understanding of the transport properties can help to improve the efficiency of a-Si：H/c-Si heterojunction solar cells, and provide useful guidance for actual heterojunction with intrinsic thin layer （HIT） solar cell manufacturing.

关 键 词：SIMULATION heterojunction solar cells transport properties 

分 类 号：TM914.4[电气工程—电力电子与电力传动]