A monolithic 60GHz balanced low noise amplifier  

作　　者：杨雪 杨浩 张海英 郑新年 戴志伟 李志强 杜泽保 

机构地区：[1]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第4期110-114,共5页半导体学报（英文版）

基　　金：supported by the External Cooperation Program of BIC,Chinese Academy of Sciences(No.172511KYSB20130108)

摘　　要：This paper presents a 60 GHz balanced low noise amplifier. Compared with single-ended structures, the balanced structure can obtain a better input/output return loss, a lower noise figure （NF）, a 3 dB improvement of the 1 dB compression point, a 6 dB improvement of 1M3 and a doubled dynamic range. Each single-ended amplifier in this paper uses a four-stage cascade structure to achieve a high gain in broadband. At the operating frequency range of 59-64 GHz, the small signal gain of the balanced amplifier is more than 20 dB. Both the input and output return losses are less than -12 dB. The output 1 dB compression power is 10.5 dBm at 60 GHz. The simulation result for the NF is better than 3.9 dB. The chip is fabricated using a 0.15 μm GaAs pHEMT process with a size of 2.25 × 1.7 mm2.This paper presents a 60 GHz balanced low noise amplifier. Compared with single-ended structures, the balanced structure can obtain a better input/output return loss, a lower noise figure （NF）, a 3 dB improvement of the 1 dB compression point, a 6 dB improvement of 1M3 and a doubled dynamic range. Each single-ended amplifier in this paper uses a four-stage cascade structure to achieve a high gain in broadband. At the operating frequency range of 59-64 GHz, the small signal gain of the balanced amplifier is more than 20 dB. Both the input and output return losses are less than -12 dB. The output 1 dB compression power is 10.5 dBm at 60 GHz. The simulation result for the NF is better than 3.9 dB. The chip is fabricated using a 0.15 μm GaAs pHEMT process with a size of 2.25 × 1.7 mm2.

关 键 词：balanced amplifier 60 GHz low noise 

分 类 号：TN722.3[电子电信—电路与系统] TH325[机械工程—机械制造及自动化]