System-level simulation of microbolometer and read-out integrated circuit  

作　　者：CHEN Chao JIANG YaDong ZHANG Long ZHOU Yun ZHENG Xing 

机构地区：[1]School of Optoelectronic Information, University of Electronic Science and Technology of China [2]State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China

出　　处：《Science China(Technological Sciences)》2015年第5期907-915,共9页中国科学（技术科学英文版）

基　　金：supported by the National Natural Science Foundation of China(Grant Nos.61235006 and 61421002)

摘　　要：A method for system-level simulation between microbolometer designing and Read-Out Integrated Circuit(ROIC) was studied. Three-dimensional(3D) structure modeling of the microbolometer was built. Thermal capacity, thermal conductivity and resistance of the model were obtained from thermoelectric coupling Finite Element Method(FEM) based on the model. An electrical equipment circuit of microbolometer which contains these three parameters was established. By using Verilog-AMS language, the electrical equipment circuit was described as a reduced-order macro-model. Then, the reduced-order macromodel was compiled in cadence to form IP unit of microbolometer, which could be used and identified in cadence. Systemlevel simulation between microbolometer and ROIC was accomplished. Key performances of the device, including input and output characteristics, were obtained in simulation and verified by experimental results.

关 键 词：verified pixel Verilog histogram NETD accomplished Figure capacitance captured designing 

分 类 号：TN401[电子电信—微电子学与固体电子学]