电沉积法制备硫化镉薄膜及表征  

Preparation and Characterization of Cadmium Sulfide Thin Films by Electrodeposition

作　　者：吴建文[1] 汪涛[1] 苏乾民[1] 杨长安[2] 张钦峰[2] 

机构地区：[1]四川工程职业技术学院建筑系,四川德阳618000 [2]陕西科技大学材料科学与工程学院,陕西西安710021

出　　处：《陶瓷学报》2015年第2期162-165,共4页Journal of Ceramics

摘　　要：以CdCl2和Na2S2O3混合溶液为电解液,采用电沉积法在ITO导电玻璃基片上制备了CdS纳米薄膜。讨论了沉积电压、热处理等工艺因素对薄膜的影响。分别采用X射线衍射仪(XRD),电子色散能谱仪(EDS)、扫描电子显微镜(SEM)和原子力显微镜(AFM)分析了硫化镉薄膜的物相结构和表面形貌。结果表明制备的硫化镉薄膜热处理前为非晶相,热处理后的硫化镉薄膜出现六方纤锌矿CdS相。沉积电压非常重要,小于4.0 V时,制备的硫化镉薄膜由六方纤锌矿CdS相和六方相金属Cd组成。Electrochemical method was adopted to deposit CdS thin films on the surface of ITO glass using CdCl2 and Na2S2O3 as source materials. The influence of deposition voltage and heat-treatment on the phase compositions, surface morphologies properties of the films, the phase, microstructure and element distribution of CdS thin films were characterized by X-ray diffraction, scanning electron microscopy and energy dispersive spectroscopy techniques. The results showed that the as-prepared cadmium sulfide thin film exhibits amorphous phase before thermal processing and a hexagonal wurtzite CdS structure after the treatment. Deposition voltage is very important, and the cadmium sulfide thin films prepared under the deposition voltage of less than 4.0 V are composed of hexagonal wurtzite CdS phases and hexagonal Cd phase.

关 键 词：电沉积 硫化镉 薄膜 

分 类 号：TQ174.75[化学工程—陶瓷工业]