Bi_3NbZrO_9掺杂对BST电容器陶瓷介电性能的影响  

Influence of Bi_3Nb ZrO_9 Doping on the Dielectric Properties of BST Capacitor Ceramics

作　　者：吕淑珍[1] 徐锭成 徐海洋 黄新友[3] 

机构地区：[1]浙江广厦建设职业技术学院,东阳322100 [2]东阳市海成工具砂轮有限公司,东阳322100 [3]江苏大学材料科学与工程学院,镇江212013

出　　处：《硅酸盐通报》2015年第4期1041-1046,共6页Bulletin of the Chinese Ceramic Society

基　　金：广东省教育部产学研结合项目资助(2011B090400027)

摘　　要：采用传统固相烧结法，利用X-射线衍射仪（XRD）、扫描电镜（SEM）等方法系统研究了Bi3NbZrO9掺杂量对（Ba，Sr）TiO3（bariumstrontiumtitanate，BST）基电容器陶瓷介电性能和微观结构的影响。结果表明：Bi3NbZrO9掺杂没有改变BST陶瓷主晶相，随着掺杂量的增加会出现一些杂相。Bi3NbZrO9掺杂BST陶瓷具有小的介质损耗值，对材料居里峰的移动和展宽效应明显。Bi3NbZrO9掺杂量为1wt％时，烧结温度为1280℃，BST陶瓷具有较佳的介电性能：介电常数（εt）=2325，介质损耗（tanδ）=0．0048，耐压强度（Eb）=7．8kV／mm（AC），-30～85％温度范围内，容温变化率（△C／C）为-12．9％～14．3％。Influence of Bi3NbZrO9 doping amount on the dielectric properties and microstructure of （Ba, Sr）TiO3 （barium strontium titanate, BST） capacitor ceramics by means of X-ray diffraction （XRD）, Scanning electron microscopy （SEM） and traditional solid state sintering method. The results show that the main crystal phase was not changed. The impurity materials phase were appeared when Bi3NbZrO9 doping amount increased. The dielectric loss of BST ceramics doped with Bi3NbZrO9 had low value, moving effect and broadening effect of Bi3NbZrO9 for curie peak of BST ceramics were obvious. When Bi3NbZrO9 doped amount was lwt%, the sintered temperature was 1280 ℃, the BST ceramics possessed good comprehensive property with dielectric constant （ εt） of 2325, dielectric loss （tanδ） of 0. 0048, AC withstand voltage strength（Eb） of 7.8 kV/mm（AC）, capacitance temperature changing rate（ △ C/C） of -12.9%-14.3% in the temperature range of -30-85 ℃.

关 键 词：电容器陶瓷 Bi3NbZrO9掺杂 钛酸钡锶 介电性能 

分 类 号：TQ174[化学工程—陶瓷工业]