MIM capacitors with various Al_2O_3 thicknesses for GaAs RFIC application  

作　　者：周佳辉 常虎东 刘洪刚 刘桂明 徐文俊 李琦 李思敏 何志毅 李海鸥 

机构地区：[1]Guangxi Experiment Center of Information Science,Guilin University of Electronic Technology [2]Microwave Device and IC Department,Institute of Microelectronics,Chinese Academy of Sciences [3]State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China

出　　处：《Journal of Semiconductors》2015年第5期37-40,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(Nos.61274077,61474031);the Guangxi Natural Science Foundation(No.2013GXNSFGA019003);the Guangxi Department of Education Project(No.201202ZD041);the Guilin City Technology Bureau(Nos.20120104-8,20130107-4);the China Postdoctoral Science Foundation Funded Project(Nos.2012M521127,2013T60566);the National Basic Research Program of China(Nos.2011CBA00605,2010CB327501);the Innovation Project of GUET Graduate Education(Nos.GDYCSZ201448,GDYCSZ201449);the State Key Laboratory of Electronic Thin Films and Integrated Devices,UESTC(No.KFJJ201205);the Guilin City Science and Technology Development Project(Nos.20130107-4,20120104-8)

摘　　要：The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.The impact of various thicknesses of Al2O3 metal-insulator-metal （MIM） capacitors on direct current and radio frequency （RF） characteristics is investigated. For 20 nm Al2O3, the fabricated capacitor exhibits a high capacitance density of 3850 pF/mm2 and acceptable voltage coefficients of capacitance of 681 ppm/V2 at 1 MHz. An outstanding VCC-a of 74 ppm/V2 at 1 MHz, resonance frequency of 8.2 GHz and Q factor of 41 at 2 GHz are obtained by 100 nm Al2O3 MIM capacitors. High-performance MIM capacitors using GaAs process and atomic layer deposition Al2O3 could be very promising candidates for GaAs RFIC applications.

关 键 词：MIM capacitors AL2O3 thickness 

分 类 号：TN409[电子电信—微电子学与固体电子学]