Preparation for Bragg grating of 808 nm distributed feedback laser diode  

作　　者：王勇 刘丹丹 冯国庆 叶镇 高占琦 王晓华 

机构地区：[1]National Key Laboratory on High Power Semiconductor Lasers,Changchun University of Science and Technology

出　　处：《Journal of Semiconductors》2015年第5期54-57,共4页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.11474036);the National Key Lab of High Power Semiconductor Lasers Foundations(No.9140C310103120C3101)

摘　　要：The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.The second-order Bragg grating structure of an 808 nm distributed feedback semiconductor laser diode was designed and optimized. The grating with a period of 240 nm was fabricated on GaAs substrate by holographic photolithography and wet etching. Images of optical microscopy, scanning electron microscopy and atomic force microscopy show that the grating has a period of 240 nm, duty cycle of 0.25, depth of 80 nm, with perfect surface morphology, good fringe continuity and uniformity.

关 键 词：distributed feedback （DFB） laser diode （LD） GRATING holographic photolithography 

分 类 号：TN31[电子电信—物理电子学] TN253