On-wafer de-embedding techniques from 0.1 to 110 GHz  

作　　者：汤国平 姚鸿飞 马晓华 金智 刘新宇 

机构地区：[1]School of Advanced Materials and Nanotechnology,Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices,Xidian University [2]Institute of Microelectronics,Chinese Academy of Sciences

出　　处：《Journal of Semiconductors》2015年第5期72-80,共9页半导体学报（英文版）

基　　金：Project supported by the National Natural Science Foundation of China(No.61401457)

摘　　要：On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1- 40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.On-wafer S-parameter de-embedding techniques from 0.1 to 110 GHz are researched. The solving re- suits of thru-reflect-line （TRL） and line-reflect-match （LRM） de-embedding algorithms, when the input and output ports are asymmetric, are given. The de-embedding standards of TRL and LRM are designed on an InP substrate. The validity of the de-embedding results is demonstrated through two passive components, and the accuracy of TRL and LRM de-embedding techniques is compared from 0.1 to 110 GHz. By utilizing an LRM technique in 0.1- 40 GHz and a TRL technique in 75-110 GHz, the intrinsic S-parameters of active device HBT in two frequency bands are obtained, and comparisons of the extracted small-signal current gain and the unilateral power gain before and after de-embedding are presented. The whole S-parameters of actual DUT from 0.1 to 110 GHz can be obtained by interpolation.

关 键 词：model MILLIMETER-WAVE de-embed TRL LRM 

分 类 号：TN303[电子电信—物理电子学]