多晶硅锭定向凝固过程的温度场模拟  

Numerical Simulation of Temperature Field in Directional Solidification Process of Polysilicon Ingot

作　　者：蔡莉莉[1] 冯翠菊[1] 王会彬[2] 

机构地区：[1]华北科技学院基础部,河北廊坊065201 [2]中海油田服务股份有限公司,河北廊坊065201

出　　处：《材料科学与工程学报》2015年第1期117-121,共5页Journal of Materials Science and Engineering

基　　金：国家自然科学基金资助项目(50872028);河北省教育厅科技资助项目(Z2013024);中央高校基本科研业务费资助项目(JCB2013B09)

摘　　要：采用数值模拟方法研究了不同的工艺条件对多晶硅锭定向凝固过程中固液界面形状和温度梯度的影响,为优化多晶硅凝固过程的参数和有效控制定向凝固过程提供了参考依据。模拟结果表明,降埚速率越大,晶体生长速率越快,硅锭内温度梯度也随之增加,当降埚速率小于60mm/h时,固液界面始终保持凹界面;保持一定的降埚速率和冷源温度不变,改变多晶硅锭的冷却速率,坩埚内固液界面的形状基本保持不变,但冷却速率对晶锭内温度梯度的影响较明显,冷却速率越大晶锭内温度梯度越大。The effects of the different process conditions on the solid-liquid interface shape and temperature gradient were investigated by the numerical simulation.The results can provide the reference for optimizing processing parameters in the polysilicon solidification process and controlling the solidification process effectively.The simulation results show that the crystal growth rate and the temperature gradient increase with the crucible descending ratio increase.When crucible descending ratio is less than 60mm/h,the solid-liquid interface maintains a concave interface.Keeping a certain crucible descending ratio and constant cold source temperature,cooling rate has no effect on solid-liquid interface shape.But it influences the temperature gradient in the ingot obviously.The cooling rate increases with the temperature gradient in the ingot.

关 键 词：多晶硅锭 数值模拟 温度梯度 固-液界面 

分 类 号：TN304.1[电子电信—物理电子学]