Si_3N_4-TiC和Si_3N_4-TiN复相导电陶瓷的制备及电加工性能研究  

Preparation and EDM Performance of Si_3N_4-TiC and Si_3N_4-TiN Composite Conductive Ceramics

作　　者：古尚贤 郭伟明[1] 伍尚华[1] 游洋[1] 蒋强国[1] 高棱[1] 

机构地区：[1]广东工业大学机电工程学院,广州510006

出　　处：《人工晶体学报》2015年第4期1095-1100,共6页Journal of Synthetic Crystals

基　　金：广东省引进领军人才专项资金(400120001);广东省产学研结合项目(2009A090100015)

摘　　要：以TiC和TiN粉为导电相,利用热压烧结制备了Si3N4-TiC和Si3N4-TiN复相导电陶瓷。比较了TiC和TiN对Si3N4陶瓷相组成、致密度、显微结构、力学性能、导电性能及电火花加工性能的影响。结果表明:高温下TiN与Si3N4具有良好稳定性,烧结后获得Si3N4-TiN复相导电陶瓷,然而高温下TiC却与Si3N4反应形成了TiC0.5N0.5和SiC,烧结后获得Si3N4-TiC0.5N0.5-SiC复相导电陶瓷。虽然TiN和TiC的引入对Si3N4的硬度和断裂韧性的影响没有明显差别,然而TiC的引入可以更好的改善Si3N4的致密化、导电性能及电火花加工性能;与以TiN为导电相所制备的Si3N4基导电陶瓷相比,以TiC为导电相所制备的Si3N4基复相导电陶瓷电火花加工后表面的粗糙度值和材料去除率更低。Si3N4-TiC and Si3N4-TiN conductive composite ceramics were prepared by hot press sintering using TiC and TiN powders as conductive phase,respectively. The phase composition,densification,microstructure,mechanical properties,electrical conductivity and electrical discharge machining（ EDM）performance of Si3N4-TiC and Si3N4-TiN ceramics were compared. The results show that Si3N4-TiN could be obtained after hot press sintering,due to the good stability of Si3N4 and TiN in high temperature.However,Si3N4-TiC0. 5N0. 5-SiC conductive composites were prepared,due to the reaction of Si3N4 and TiC under the high temperature. There were no significant differences in the hardness and fracture toughness between Si3N4-TiC and Si3N4-TiN. Compared with Ti N,the introduction of TiC could better improve the densification of Si3N4,conductive performance and EDM performance. The Si3N4-based ceramics with TiC as conductive phase has lower surface roughness and material removal rate after EDM.

关 键 词：Si3N4-TiC Si3N4-TiN 热压烧结 导电陶瓷 导电性 

分 类 号：TB332[一般工业技术—材料科学与工程]