基于AAO纳米光栅的GaAs太阳能电池组合陷光结构设计与仿真  

Design and Simulation of Anodic Aluminum Oxide Nanograting Light Trapping Structure for GaAs Solar Cells

作　　者：秦飞飞[1] 张海明[1] 王彩霞[1] 张晶晶[1] 郭聪[1] 

机构地区：[1]天津工业大学理学院,天津300387

出　　处：《人工晶体学报》2015年第4期1132-1136,共5页Journal of Synthetic Crystals

基　　金：国家自然科学基金(61274064)

摘　　要：提出了一种新型的表面和底部都带有阳极氧化铝（AAO）纳米光栅的GaAs太阳能电池结构,理论分析了表面和底部陷光作用的原理。利用FDTD Solution软件研究了短路电流密度（Jsc）和AAO几何参数的关系。结果表明,表面AAO和TiO2双减反层能很好的减少反射。背部AAO和Ag背反射可以有效的增大光程,从而减少电池厚度。带有组合陷光结构的电池可以在0°~45°范围内保持较稳定的Jsc数值。与只有减反层的结构相比,在相同Jsc条件下,组合陷光结构可以减少一半GaAs厚度。A double light trapping structure combined by AAO on both the surface and rear of GaAs solar cells was proposed. The light trapping principle was analyzed in theory. The relationship between the short circuit current density（ Jsc） and AAO geometric parameter was studied by finite difference time domain（ FDTD） simulation software. The results show that AAO and Ti O2 combined anti-reflection structures can highly reduce the surface reflection. The AAO and Ag back layer can efficiently enhance the light path and then reduce the cell＇s thickness. The combined structure can hold a stable Jscin the incident angles ranging from 0° to 45°. Besides,compared with solar cells only with surface AR structure,our design can reduce the GaAs layer nearly by a half at the same Jsc.

关 键 词：GaAs太阳能电池 AAO 陷光结构 短路电流密度 

分 类 号：TM914[电气工程—电力电子与电力传动]