掺硼金刚石薄膜电极的制备及电化学特性  

Preparation and Electrochemical Properties of Boron-Doped Diamond Film Electrode

作　　者：王帅[1] 檀柏梅[1] 高宝红[1] 张男男[1] 安卫静 

机构地区：[1]河北工业大学微电子研究所,天津300130

出　　处：《半导体技术》2015年第5期378-381,共4页Semiconductor Technology

基　　金：国家科技重大专项资助项目(2009ZX02308-003;2014ZX02301003-007)

摘　　要：通过热丝化学气相沉积(HFCVD)技术,在钽衬底上制备了p型掺硼金刚石(BDD)薄膜电极。利用原子力显微镜(AFM)分析丙酮体积分数对BDD电极的表面形貌和成膜质量的影响,利用循环伏安法(CV)分析BDD电极在不同种类、不同浓度电解液中的电化学特性。结果表明,当丙酮体积分数为1.5%时,金刚石薄膜表现出优异的附着力,并且BDD电极具有稳定的电化学特性。采用制备的BDD电极,在不同浓度的KCl和KH2PO4电解液中使用,得出电势窗口均在3.4 V以上。The p-type boron-doped diamond （BDD） thin film electrode was prepared on tantalum substrate by the hot filament chemical vapor deposition （HFCVD） technique. The effects of acetone volume fraction on the surface morphology and quality of the diamond thin film were studied by atomic force microscopy （AFM）. The electrochemical properties of the BDD film electrode in the electrolyte of different species and electrolyte concentrations were investigated by cyclic voltammetry （CV）. The re- suits show that the diamond films exhibites excellent adhesion when the acetone volume fraction is about 1.5%, and the BDD thin film electrodes have stable electrochemical properties. The electrochemical win- dow is more than 3.4 V when the prepared BDD film electrode is used in different concentrations of KC1 and KH2PO4 electrolytes.

关 键 词：掺硼金钢石(BDD)薄膜电极 热丝化学气相淀积(HFCVD) 循环伏安法(CV) 丙酮体积分数 电化学窗口 

分 类 号：TB383[一般工业技术—材料科学与工程] TN304.18[电子电信—物理电子学]