Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology  

作　　者：周代兵 王会涛 张瑞康 王宝军 边静 安欣 陆丹 赵玲娟 朱洪亮 吉晨 王圩 

机构地区：[1]Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

出　　处：《Chinese Physics Letters》2015年第5期66-68,共3页中国物理快报（英文版）

基　　金：Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203;the National Basic Research Program of China under Grant No 2011CB301702;the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601

摘　　要：A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.

关 键 词：Fabrication of 32 Gb/s Electroabsorption Modulated Distributed Feedback Lasers by Selective Area Growth Technology EML EAM DFB InGaAs SAG 

分 类 号：TN248[电子电信—物理电子学]