基于相变存储器的存储技术研究综述  

A Review of Storage Technology Research Based on Phase Change Memory

作　　者：冒伟[1] 刘景宁[1] 童薇[1] 冯丹[1] 李铮[1] 周文[1] 张双武[1] 

机构地区：[1]华中科技大学武汉光电国家实验室/计算机科学与技术学院,武汉430074

出　　处：《计算机学报》2015年第5期944-960,共17页Chinese Journal of Computers

基　　金：国家"九七三"重点基础研究发展规划项目基金(2011CB302301);国家自然科学基金(61303046;61173043);国家杰出青年科学基金(61025008);中央高校基本科研业务费(HUST:2013TS042)资助~~

摘　　要：以数据为中心的大数据技术给计算机存储系统带来了机遇和挑战.传统的基于动态随机存储器(DRAM)器件的内存面临工艺尺寸缩小至2Xnm及以下所带来的系统稳定性、数据可靠性等问题;相变存储器(PCM)具有非易失性、存储密度高、功耗低、抗辐射干扰等优点,且读写性能接近DRAM,是未来最有可能取代DRAM的非易失存储器,它为存储系统的研究和设计提供了新的解决方案.文中在归纳相变存储器器件发展和研究现状的基础上,对相变存储器在系统级的应用方式和面临的问题进行了比较和分析,研究了基于相变存储器的内存技术和外存技术,分析了当前在PCM的寿命、写性能、延迟、功耗等方面所提出的解决方案,指出了现有方案的优势和面临的缺陷,并探讨了未来的研究方向,为该领域在今后的发展提供了一定的参考.Data-centric big data technology brings opportunities and challenges for computer storage system. Traditional memory based on Dynamic Random Access Memory （DRAM） faces problems of system stability, data reliability caused by shrinking craft size to 2X nm and below. Phase change memory （PCM） has advantages of high storage density and low power consumption. Furthermore, it is non-volatile, anti-radiation and anti-interference, and its read/write performance is close to DRAM. All these make PCM the most promising candidate for DRAM. It offers a new solution to research and design of storage system. In this paper, we first summarized develop- ment history and related work of PCM, then analyzed application mode and problems of PCM on system level. Finally, with a study of memory/storage technologies based on PCM and existing solutions on lifetime, write performance, latency, energy consumption, we pointed out advantages and disadvantages of current technologies and predicted the directions of further research, and thus could be reference work for the development of the field in future.

关 键 词：相变存储器 非易失存储器 存储技术 计算机体系结构 

分 类 号：TP303[自动化与计算机技术—计算机系统结构] TP333[自动化与计算机技术—计算机科学与技术]