低温等离子体剥蚀-电感耦合等离子体质谱联用对电路板镀层的深度分析  

Depth Profiling of Metal Coating Circuit Board by Low Temperature Plasma-Inductively Coupled Plasma-Mass Spectroscopy System

作　　者：杨萌[1] 李铭[1] 薛蛟[1] 赵欣 黄秀[1] 冯璐[1] 邢志[1] 

机构地区：[1]清华大学化学系,北京100084 [2]聚光科技(杭州)股份有限公司,杭州310052

出　　处：《分析化学》2015年第5期709-713,共5页Chinese Journal of Analytical Chemistry

基　　金：国家重大科学仪器设备开发专项(No.2011YQ06010002);清华大学实验室创新基金(NO.04405)资助

摘　　要：建立了基于低温等离子体(Low temperature plasma)剥蚀系统将固体样品直接引入电感耦合等离子体质谱(ICP-MS)并用于电路板镀层中Au,Ni和Cu的深度分析。此实验中采用介质阻挡放电(DBD)方式产生低温等离子体探针,逐层剥蚀样品表面,由ICPMS检测元素信号。对DBD所用放电气体种类、外加电场功率、放电气体流速和采样深度等实验条件进行优化。在优化条件下,应用LTP-ICPMS在30 s内完成电路板镀层(20μm Au/10μm Ni/Cu基底)的逐层剥蚀和深度分析,元素种类和分层顺序与X射线光电子能谱(XPS)相吻合,镀层的分辨率可拓展至微米水平,表明此技术可直接用于固体样品的深度分析。A depth profile analysis method for Au, Ni and Cu in the metal coating circuit board by low temperature plasma （LTP） coupled with inductively coupled plasma-mass spectroscopy （ICP-MS） system was established. The LTP probe which was generated by dielectric barrier discharge （DBD） ablated the sample layer by layer for the determination by ICP-MS. The experimental conditions such as DBD applied electric power, discharge gas flow rate and sputtering depth were optimized. Depth profiling of a coating circuit board （20 μm Au/10 μm Ni/Cu substrate） could be completed by LTP-ICPMS within 30 s. The detection results were consistent with X ray photoelectron spectroscopy （XPS）, which showed that the technology could be directly used to analyze solid samples of the longitudinal depth profile of elements.

关 键 词：低温等离子体 介质阻挡放电 剥蚀 深度分析 电路板 电感耦合等离子体质谱 

分 类 号：TN41[电子电信—微电子学与固体电子学] O657.63[理学—分析化学]