集成大面积光电探测器接收芯片的优化设计(英文)  

Realization of a High Sensitivity Fully-integrated Receiver with Optimized Large-area Photodetector

作　　者：范程程[1] 程翔[1] 颜黄苹[1] 史晓凤[2] 郑明[1] 徐攀[1] 陈朝[1,3] 

机构地区：[1]厦门大学物理与机电工程学院,福建厦门361005 [2]阜阳师范学院计算机与信息工程学院,安徽阜阳236037 [3]厦门大学能源研究院,福建厦门361005

出　　处：《光子学报》2015年第4期76-81,共6页Acta Photonica Sinica

基　　金：The National Natural Science Foundation of China(No:61205060);Key Project of Science and Technology of Fujian Province,China(No.2013H0047)

摘　　要：通过仿真优化探测器的结构参数和性能,设计了基于0.25μm标准BCD(Biplor,CMOS and DMOS)工艺的大面积多叉指状PIN光电探测器.选择已优化的大面积光电探测器用于和跨阻放大器以及后端放大器单片集成,采用0.25μm BCD工艺实现了一个用于650nm塑料光纤通信的单片集成光接收芯片.结果表明:多叉指状PIN光电探测器对650nm入射光的响应度提高至0.260A/W,其结电容降低至4.39pF.对于650nm的入射光,在速率250 Mb/s、误码率小于10-9的条件下,光接收芯片的灵敏度为-23.3dBm,并得到清晰的眼图.该光电探测器可用于宽带接入网中的高速塑料光纤通信系统的光接收芯片中.Multi-finger PIN photodetector was designed and optimized in a standard 0.25μm BCD（Bipolar,CMOS and DMOS）process.The optimized large-area multi-finger structure PIN photodetector was applied in the monolithic optoelectronic receiver with a trans-impedance amplifier and a pre-amplifier.Based on simulation and test results,it is shown that 650 nm responsibility of PIN photodetector is improved up to 0.260A/W and the junction capacitance is decreased down to 4.39 pF for the multi-finger structure.The receiver achieves a sensitivity of-23.3dBm with the bit-error-rate of 10^-9 at 250Mb/s at650 nm.A clear eye diagram of the proposed receiver is demonstrated for 250Mb/s.Results indicate that the monolithic optical receiver can be applied to 250 Mb/s plastic optical fiber communication.

关 键 词：塑料光纤通信 光接收芯片 多叉指PIN 光电探测器 BCD工艺 

分 类 号：TN360.5[电子电信—物理电子学] TN303