Phonon contribution to nonionizing energy loss in silicon detectors  

作　　者：李荣华 李占奎 杨磊 李冬梅 李海霞 王柱生 陈翠红 谭继廉 刘凤琼 戎欣娟 王秀华 李春艳 祖凯铃 卢子伟 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences [2]Computer and Information Engineering Institute,Nanyang Institute Technology

出　　处：《Chinese Physics C》2015年第6期81-84,共4页中国物理C（英文版）

基　　金：Supported by National Natural Science Foundation of China(11175223,11305231,11205220)

摘　　要：Nonionizing energy loss（NIEL） has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects,neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons,has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles.NIEL is proportional to the equivalent irradiation fluence that the detector has received.Nonionizing energy loss（NIEL） has been applied to a number of studies concerning displacement damage effects in materials and devices. However, most studies consider only the contribution of displacement damage effects,neglecting the contribution from phonons. In this paper, a NIEL model, which considers the contribution of phonons,has been established using the Monte Carlo code SRIM. The maximum endurable fluence for silicon detectors has been estimated using the equivalent irradiation fluence compared with experimental data for the incident particles.NIEL is proportional to the equivalent irradiation fluence that the detector has received.

关 键 词：irradiation concerning incident proportional phonon convert files decreasing constants reaches 

分 类 号：TN303[电子电信—物理电子学]