Application of stratified implantation for silicon micro-strip detectors  

作　　者：李海霞 李占奎 王方聪 李荣华 陈翠红 王秀华 戎欣娟 刘凤琼 王柱生 李春艳 祖凯玲 卢子伟 

机构地区：[1]Institute of Modern Physics,Chinese Academy of Sciences [2]Institute of Microelectronics,School of Physical Science and Technology,Lanzhou University

出　　处：《Chinese Physics C》2015年第6期85-88,共4页中国物理C（英文版）

基　　金：Supported by National Natural Science Foundation of China(11175223,11305231,11205220)

摘　　要：In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.In the fabrication of a 48 mm×48 mm silicon micro-strip nuclear radiation detector with 96 strips on each side, a perfect P-N junction cannot be formed consistently by the one-step implantation process, and thus over 50% of strips produced do not meet application requirements. However, the method of stratified implantation not only avoids the P region between the surface of wafers and the P＋ region, but also overcomes the shadow effect. With the help of the stratified implantation process, a perfect functional P-N junction can be formed, and over 95% of strips meet application requirements.

关 键 词：nuclear radiation detectors stratified implantation P-N junction reverse body resistance 

分 类 号：TN303[电子电信—物理电子学]