Al掺杂MgO保护层对二次电子发射系数的影响（英文）  

Calculation of Secondary Electron Emission Coefficient of Al-Doped MgO Protective Layer

作　　者：邓江[1] 曾葆青[2] 

机构地区：[1]成都信息工程学院光电技术学院,成都610225 [2]电子科技大学物理电子学院,成都610054

出　　处：《电子科技大学学报》2015年第3期375-380,共6页Journal of University of Electronic Science and Technology of China

摘　　要：采用基于密度泛函理论的第一性原理赝势法,研究了Al掺杂对于MgO保护层电子结构的影响。采用Hagstrum’s理论计算了在不同放电气体环境下,不同Al掺杂比例的Mg1-xAlxO的能带结构和态密度分布,分别获得了基于俄歇中和和俄歇退激理论的二次电子发射系数。结果表明,Al掺杂MgO能有效提高二次电子发射系数,且在氦气环境下二次电子发射系数的提高尤为显著。当Al掺杂比例为0.375时,在氦气环境下基于俄歇中和和俄歇退激理论的二次电子发射系数最大,分别为0.4191和0.4316(纯MgO为0.3543、0.4060)。In this work, a first-principle calculation method is introduced to analyze the secondary emission coefficient of Mg1-xAlxO protective layer of a plasma display panel （AC PDP）. The band gaps and the electronic structures of pure MgO and Mg1-xAlxO layers with different Al doping ratios are calculated based on Hagstrum’s theory. The secondary electron emission coefficient of Mg1-xAlxO layers in various gases environments based on Auger neutralization and Auger de-excitation are obtained. The calculated results show the secondary electron emission coefficient of Mg1-xAlxO layer is higher than that of pure MgO, especially in helium environment. When Al doping ratio is 0.375, the secondary electron emission coefficient in He based on Auger neutralization and Auger de-excitation theory is 0.4191 and 0.4316, respectively, compared with pure MgO of 0.3543 and 0.4060. Thus, using an Mg1-xAlxO protective layer is an effective method to improve the secondary electron emission coefficient of AC PDP.

关 键 词：Al掺杂MgO 第一性原理 等离子体显示器 保护层 二次电子发射系数 

分 类 号：O461.2[理学—电子物理学]