金刚石薄膜对电子束流强放大特性的数值模拟  

Numerical simulation of electron beam current amplification characteristic in diamond film

作　　者：邵琰[1] 鲁忠涛[1] 许德荣[1] 徐宏亮[1] 

机构地区：[1]中国科学技术大学国家同步辐射实验室,合肥230029

出　　处：《强激光与粒子束》2015年第5期281-284,共4页High Power Laser and Particle Beams

基　　金：国家自然科学基金项目(10875118);国家自然科学基金项目(11375176)

摘　　要：为充分了解用于金刚石放大光阴极电子枪中的金刚石薄膜对初级电子束流强的放大特性及与其他因素的关系,利用VSIM软件的PIC模块对金刚石放大电子束流强的物理特性进行了数值模拟,结果给出了电子束流强的最大放大倍数与初级电子束能量、金刚石薄膜内部场强及金刚石薄膜厚度等因素的定量关系。模拟结果显示,选择合适的初级电子束能量和金刚石薄膜内部场强,电子束流强的最大放大倍数可以达到两个数量级。In order to fully understand the electron beam current amplification characteristic in diamond used in the diamond amplified photocathode as well as the relationship with other factors, a PIC module of VSIM was used to simulate the amplifica- tion characteristic of the electron beam current in diamond. The relationships among the secondary electron yield and the energy of the primary electrons, the internal field in diamond, the diamond film thickness and some other factors were obtained from the simulation results. The secondary electron yield could reach two orders of magnitude when appropriate primary electrons energy and internal field in diamond film were chosen.

关 键 词：金刚石薄膜 二次电子 数值模拟 最大放大倍数 

分 类 号：TL506[核科学技术—核技术及应用] TL812