RF磁控溅射沉积压强对InGaZnO4薄膜特性的影响  

Influence of deposition pressure on optical and electrical properties of IGZO films fabricated by radio frequency magnetron sputtering

作　　者：闫小兵[1] 史守山[1] 娄建忠[1] 郑树凯[1] 曹智[1] 

机构地区：[1]河北大学电子信息工程学院,河北省数字医疗工程重点实验室,河北保定071002

出　　处：《河北大学学报（自然科学版）》2015年第3期243-246,252,共5页Journal of Hebei University(Natural Science Edition)

基　　金：国家自然科学基金资助项目(61306098);河北省自然科学基金资助项目(E2012201088;E2013201176);河北省高等学校科学研究项目(ZH2012019;BJ2015008);河北大学人才引进基金资助项目(2011-219)

摘　　要：采用射频（RF）磁控溅射沉积方法,在室温不同压强下在石英玻璃衬底上制备出高透光率与较好电学性质的透明氧化物半导体InGaZnO4（IGZO）薄膜,并对薄膜进行X线衍射（XRD）、生长速率、电阻率和透光率的测试与表征.结果表明,实验所获样品IGZO薄膜为非晶态,薄膜最小电阻率为1.3×10^-3Ω·cm,根据光学性能测试结果,IGZO薄膜在200～350 nm的紫外光区有较强吸收,在400～900 nm的可见光波段的透过率为75％～97％.The InGaZnO films with high transmittance and better electrical properties were grown on a quartz glass substrate at room temperature under different pressures by RF magnetron sputtering deposi- tion method. The X-ray diffraction pattern, the growth rate of the film, the resistivity and the light trans- mittance were measured. The results indicated that the IGZOfims was amorphous, and the minim resistivi- ty was 1.3×10^-3Ω· cm. The abrupt absorption edge of the film appeared at about 200 350 nm, and the film presented a high transmittance of 75 % 97 % in the visible range from 400 to 900 nm.

关 键 词：沉积压强 光学性质 电学性质 

分 类 号：TB32[一般工业技术—材料科学与工程]