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出 处:《南华大学学报(自然科学版)》2015年第2期84-86,共3页Journal of University of South China:Science and Technology
基 金:湖南省自然科学基金资助项目(14JJ2085);湖南省衡阳市科技局科学研究基金资助项目(2014KJ14)
摘 要:研究了电子碰撞和自由电子密度分布对铁催化高压歧化生成的单壁碳纳米管中氢等离子体微波衰减的影响,运用Wentzel-Kramers-Brillouin(WKB)法理论推导了碳纳米管薄膜氢等离子体的微波衰减系数公式.模拟结果表明,随着单壁碳纳米管薄膜氢等离子体中自由电子密度的线性增加,衰减吸收峰值增加,衰减吸收峰向高频方向移动.随着电子有效碰撞频率的增加,衰减吸收峰向低频方向做微小移动.铁催化高压歧化生成的碳纳米管薄膜中氢等离子体对3-4 GHz的微波产生强烈衰减吸收.The influences of electronic collision and liberal electron density of hydrogen plasma on microwave attenuation of hydrogen plasma in carbon nanotubes films are investigated in detail. Based on Wentzel-Kramers-Brillouin (WKB) approximation, the microwave attenuation coefficient of hydrogen plasma in single wall carbon nanotubes, which are grown by iron-catalyzed high-pressure disproportionation (HiPco) , is deduced. Numerical results indicate that with the increase of the liberal electron density, the maximum attenuation absorption | Attmax | increases, and the attenuation absorption peak shifts towards the high frequencies. As the electronic effective collision frequency increases, the attenuation absorption peak shifts slowly towards low frequency. Microwave energy loss (3-4 GHz) is predominantly caused by the hydrogen plasma in carbon nanotubes films, which are grown by iron-catalyzed high-pressure disproportionation (HiPco).
分 类 号:TM272[一般工业技术—材料科学与工程]
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