氧氩流量比对RF溅射ZnO：Mg薄膜结构及光学性能的影响  

Influence of O_2/Ar on structure and optical properties of ZnO:Mg thin films deposited by RF magnetron sputtering

作　　者：自兴发 叶青[1] 刘瑞明[1] 何永泰[1] 

机构地区：[1]楚雄师范学院物理与电子科学学院,云南楚雄675000 [2]云南师范大学太阳能研究所,可再生能源材料先进技术及制备教育部重点实验室,云南昆明650092

出　　处：《光电子．激光》2015年第5期883-888,共6页Journal of Optoelectronics·Laser

基　　金：国家自然科学基金(61271159)资助项目

摘　　要：利用射频（RF）磁控溅射技术,采用单质Zn靶和MgO陶瓷靶共溅射,在O2和Ar气的混合气氛下制备了Mg掺杂ZnO（ZnO：Mg）薄膜,并通过改变O2和Ar的流量比O2/Ar,研究了对ZnO：Mg薄膜的物相结构、表面形貌及光学性能的影响。结果表明,室温下O2/Ar在1∶1~3∶1范围内制备的薄膜均为单相的ZnO（002）薄膜,薄膜具有三维（3D）的结核生长模式;沉积的ZnO：Mg薄膜在N2氛下200℃退火处理后,O2/Ar为3∶1制备的薄膜在380~1200nm光谱范围内具有较高的透过率,可见光区平均透过率约为85%、最大透过率达90%;薄膜的光学带隙Eg为3.51eV,Mg掺杂对ZnO薄膜的光学带隙具有较为明显的调制作用;采用极值包络线法计算表明,薄膜在589.3nm处的折射率为1.963,膜厚约285nm。Mg-doped zinc oxide （ZnO：Mg） thin films have been deposited by radio frequency （RF）mag- netron sputtering, using a metallic Zn target and MgO ceramics target in 02 and Ar mixture atmosphere. Effects of 02/Ar on crystalline structure, surface morphology and optical properties of ZnO. Mg thin films are investigated. The results show that the thin films deposited at room temperature （RT） are sig- nal phase ZnO （002） in the 02/Ar range of 1 ： 1--3 ： 1,and thin films show characteristics of 3D nu- cleation and growth. Post deposition annealing of thin film was carried out at 200 ℃ in N2 atmosphere. The transmission spectrum of annealed thin film deposited at the 02/Ar of 3 ： 1 exhibits high transmit- tance in the wavelength region of 380-- 1 200 nm. The average transmittance is ~ 85 %, and the maxi- mum transmittance is 90% in the visible region. The optical band gap （Eg） of thin film is 3.51 eV,and the Eg value can be modulated by Mg-doping in ZnO： Mg thin film. Moreover, the refractive index and thickness of thin film are calculated based on the envelope curves of the optical transmission spectrum. The thin film exhibits the refractive index of 1. 963 （at 589.3 nm） and thickness of 285 nm.

关 键 词：射频(RF)磁控溅射 ZnO:Mg薄膜 透射光谱 光学带隙 

分 类 号：TB34[一般工业技术—材料科学与工程]