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机构地区:[1]北京科技大学数理学院,北京100083 [2]三峡大学新能源研究院,宜昌443002
出 处:《材料导报》2015年第10期26-33,52,共9页Materials Reports
基 金:国家自然科学基金(51371105)
摘 要:利用固相反应法制备了Al掺杂的Sr14(Cu1-xAlx)24O41(x=0,0.01,0.02,0.03)系列多晶样品。X射线衍射结果表明所有样品均为单相,Al掺杂使样品晶格常数a、b发生涨落,但使晶格常数cladder逐渐减小。X射线光电子能谱结果表明Al掺杂对体系内Sr、Cu、O离子价态不存在影响,并且Al离子以+3价的形式替代了Sr14Cu24O41体系内的Cu2+,不存在其他混合价态。电阻率测量结果表明所有样品均呈半导体性,Al掺杂使体系电阻率升高。进一步分析表明所有样品存在一渡越温度Tρ,Al掺杂使Tρ发生微弱涨落。在Tρ以上,自旋梯子中单个空穴热激活对体系电导存在贡献。在Tρ以下,自旋梯子中空穴的变程跳跃电导对体系电导存在贡献。实验数据拟合结果表明Al掺杂使体系内单个空穴热激活能Δ以及局域态势垒参数T0逐渐增大。A series of Sr14 (Cu1-x Alx)24 O41(x=0,0.01,0.02,0.03) polycrystalline samples were prepared by solid-state reaction. X-ray diffraction results showed that all of the samples had a single phase. A1 doping led to the lattice parameters a and b fluctuate, but Cl,da^r decreased gradually. X-ray photoelectron spectroscopy results showed that A1 doping produced no effect on the valence of Sr, Cu and O ions. Also, A1 ions were as trivalent to substitute the Cu2+ ions in this system respectively and they hadn't any other mixed valence. The results of measurement on electronic transport properties showed that all the samples were semi-conductive. A1 doping led to the increase of re- sistivity. Further analysis showed that there was a crossover temperature Te for all samples. A1 doping made Tp light- ly fluctuate. When the temperature was above Tp , the contribution to conductivity came from thermally activated sin- gle-hole. When the temperature is below Tp, the contribution to conductivity came from one-dimensional variable range hopping of holes. The fitting results showed that A1 doping made the thermally activation energy and the para- meter of potential barrier in localized state increase.
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