氧化硅-氧化铋系统中硅酸铋晶体生长实时观测  

Real-time observation of bismuth silicon oxide crystal growth in silicon oxide-bismuth oxide system

作　　者：王秀峰[1] 徐驰[1] 江红涛[1] 韩元亨 

机构地区：[1]陕西科技大学材料科学与工程学院,陕西西安710021

出　　处：《陕西科技大学学报（自然科学版）》2015年第3期42-45,共4页Journal of Shaanxi University of Science & Technology

基　　金：国家自然科学基金项目(50972087;51272149)

摘　　要：高温熔体的实时观测与分析对于晶体生长及其影响因素分析具有十分重要的意义.利用高温热台及偏光显微镜,对铋硅系统熔融及冷却过程进行实时观测.观察到高温下与石英砂接触的氧化铋粉体先熔融,说明异质颗粒接触点处是反应开始的地方.之后熔体与石英(二氧化硅)晶体反应,冷却过程中在石英晶体表面周围及坩埚壁附近生长出硅酸铋晶体,这说明晶体易在颗粒接触处析出.实验中氧化铋与二氧化硅摩尔比为4∶3,此时石英晶体并没有全部熔融.对比分析系统熔体在降温时晶体析出长大的过程,计算出硅酸铋晶体的生长平均速率为15.38μm/min.通过线能谱扫描分析,认为熔体温度和硅元素的富集程度对晶体生长速度有重要影响.Real time observation and analysis of high temperature melt is great of significance for crystal growth and the analysis of its influencing factors. The paper using high temperature thermal units and polarizing optical microscope observed the melt and cooling process of bismuth silicon systems in real time. In high temperature the bismuth oxide powder which in contact with quartz sand is first melting,it shows that the heterogeneity particles at the contact point is the place to reaction start. Then bismuth oxide melt reacted with the quartz （silicon dioxide） crystal. In cooling process the surface of quartz crystal and the crucible wall grown bismuth silicate crystals. This means at the contact point of particle is easy to crystal grow. The all of the crystalliza bismuth s scanning, mola quart tion p ilicate r ratio of bismuth oxide and silicon dioxide was 4 ： 3 in the experiment, not z crystal melted at this moment. Comparative analysis of the system melt rocess of growing up in cooling process, the average growth rate of crystals of is calculated 15.38 μm/min. According to the energy spectrum analysis of temperature and the enrichment of silicon element have important influenceon the crystal growth rate.

关 键 词：硅酸铋晶体 颗粒接触点 晶体生长 高温热台 

分 类 号：TQ171[化学工程—玻璃工业]