Modulating the metal/organic interface via Cu TCNQ decorated layer toward high performance bottom-contact single-crystal transistors  

作　　者：Liangfu He Deyang Ji Erjing Wang Yonggang Zhen Huanli Dong Wenping Hu 

机构地区：[1]Beijing National Laboratory for Molecular Science [2]Key Laboratory of Organic Solids [3]Institute of Chemistry, Chinese Academy of Sciences [4]University of Chinese Academy of Sciences

出　　处：《Science China Chemistry》2015年第6期1027-1031,共5页中国科学（化学英文版）

基　　金：supported by the National Natural Science Foundation of China(20721061,51033006,51003107,91027043);the China-Denmark Co-project,TRR61(NSFC-DFG Transregio Project);the National Basic Research Program of China(2011CB808400,2011CB932300,2009CB930400)and Chinese Academy of Sciences

摘　　要：The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt(Cu TCNQ) were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold electrode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match between electrodes and semiconductor.The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain elec- trodes decorated by metal charge transfer salt （CuTCNQ） were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold elec- trode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match be- tween electrodes and semiconductor.

关 键 词：metal charge transfer salt anthracene derivative organic single-crystal field-effect transistors 

分 类 号：TN386[电子电信—物理电子学]