Effect of Foil Target Thickness in Proton Acceleration Driven by an Ultra-Short Laser  

Effect of Foil Target Thickness in Proton Acceleration Driven by an Ultra-Short Laser

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作  者:路建新 兰小飞 席晓峰 张海峰 张骥 王雷剑 汤秀章 王乃彦 

机构地区:[1]China Institute of Atomic Energy

出  处:《Plasma Science and Technology》2015年第6期458-460,共3页等离子体科学和技术(英文版)

基  金:supported by the Key Project of Chinese National Programs for Fundamental Research(973 Program)(No.2011CB808104);National Natural Science Foundation of China(Nos.11335013,11375276,11105234)

摘  要:Proton acceleration experiments were carried out by a 1.2× 1018 W/cm2 ultra-short laser interaction with solid foil targets. The peak proton energy observed from an optimum target thickness of 7 μm in our experiments was 2.1 MeV. Peak proton energy and proton yield were investigated for different foil target thicknesses. It was shown that proton energy and conversion efficiency increased as the target became thinner, on one condition that the preplasma generated by the laser prepulse did not have enough shock energy and time to influence or destroy the target rear-surface. The existence of optimum foil thickness is due to the effect of the prepulse and hot electron transportation behavior on the foil target.Proton acceleration experiments were carried out by a 1.2× 1018 W/cm2 ultra-short laser interaction with solid foil targets. The peak proton energy observed from an optimum target thickness of 7 μm in our experiments was 2.1 MeV. Peak proton energy and proton yield were investigated for different foil target thicknesses. It was shown that proton energy and conversion efficiency increased as the target became thinner, on one condition that the preplasma generated by the laser prepulse did not have enough shock energy and time to influence or destroy the target rear-surface. The existence of optimum foil thickness is due to the effect of the prepulse and hot electron transportation behavior on the foil target.

关 键 词:ultra-short laser PROTON thin foil target target normal sheath acceleration 

分 类 号:TN249[电子电信—物理电子学] O562[理学—原子与分子物理]

 

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