GaN substrate and GaN homo-epitaxy for LEDs:Progress and challenges  

作　　者：吴洁君 王昆 于彤军 张国义 

机构地区：[1]State Key Laboratory for Artificial Microstructure and Mesoscopic Physics,School of Physics,Peking University

出　　处：《Chinese Physics B》2015年第6期65-74,共10页中国物理B（英文版）

基　　金：Project supported by the National High Technology Research and Development Program of China(Grant No.2014AA032605);the National Key Basic Research and Development Program of China(Grant Nos.2012CB619304 and 2011CB301904);the National Natural Science Foundation of China(Grant Nos.61376012,61474003,and 61327801)

摘　　要：After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy （HVPE） technology, our research results of growing GaN thick layer by a gas fow-rnodulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.After a brief review on the progresses in GaN substrates by ammonothermal method and Na-flux method and hydride vapor phase epitaxy （HVPE） technology, our research results of growing GaN thick layer by a gas fow-rnodulated HVPE, removing the GaN layer through an efficient self-separation process from sapphire substrate, and modifying the uniformity of multiple wafer growth are presented. The effects of surface morphology and defect behaviors on the GaN homo-epitaxial growth on free standing substrate are also discussed, and followed by the advances of LEDs on GaN substrates and prospects of their applications in solid state lighting.

关 键 词：gallium nitride （GaN） free standing substrate hydride vapor phase epitaxy （HVPE） homo-epitaxy 

分 类 号：TN312.8[电子电信—物理电子学]